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科研机构
新疆理化技术研究所 [19]
内容类型
期刊论文 [19]
发表日期
2020 [1]
2019 [2]
2018 [1]
2017 [3]
2016 [3]
2015 [4]
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专题:新疆理化技术研究所
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Broadening of the Fluorescence Spectra of Sesquioxide Crystals for Ultrafast Lasers
期刊论文
CRYSTAL GROWTH & DESIGN, 2020, 卷号: 20, 期号: 7, 页码: 4678-4685
作者:
Liu, WY (Liu, Wenyu)[ 1,2 ]
;
Lu, DZ (Lu, Dazhi)[ 1,2 ]
;
Guo, RQ (Guo, Ruiqi)[ 1,2 ]
;
Wu, K (Wu, Kui)[ 3 ]
;
Pan, SL (Pan, Shilie)[ 4 ]
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2020/09/09
Insights into the Mechanism of Quercetin against BSA-Fructose Glycation by Spectroscopy and High-Resolution Mass Spectrometry: Effect on Physicochemical Properties
期刊论文
JOURNAL OF AGRICULTURAL AND FOOD CHEMISTRY, 2019, 卷号: 67, 期号: 1, 页码: 236-246
作者:
Zhang, L (Zhang, Lu)[ 1,2 ]
;
Lu, Y (Lu, Yu)[ 1,2 ]
;
Ye, YH (Ye, Yun-hua)[ 1,2 ]
;
Yang, SH (Yang, Si-hang)[ 1,2 ]
;
Tu, ZC (Tu, Zong-cai)[ 1,2,3 ]
收藏
  |  
浏览/下载:142/0
  |  
提交时间:2019/03/05
quercetin
glycation
BSA-fructose
conformational structure
Easy-nLC Q-Exactive MS/MS
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs
期刊论文
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zhou, H (Zhou, Hang)[ 1,2,3 ]
;
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2020/03/20
Hot carrier effect
PMOS
Total ionizing dose effect
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
作者:
Ma, T (Ma, Teng)
;
Yu, XF (Yu, Xuefeng)
;
Cui, JW (Cui, Jiangwei)
;
Zheng, QW (Zheng, Qiwen)
;
Zhou, H (Zhou, Hang)
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2018/03/14
Reliability
Proton Irradiation
Radiation Induced Leakage Current (Rilc)
Time-dependent Dielectric Breakdown (Tddb)
Total Ionizing Does (Tid)
Phloroglucinol Derivatives with Protein Tyrosine Phosphatase 1B Inhibitory Activities from Eugenia jambolana Seeds
期刊论文
JOURNAL OF NATURAL PRODUCTS, 2017, 卷号: 80, 期号: 2, 页码: 544-550
作者:
Liu, FF (Liu, Feifei)
;
Yuan, T (Yuan, Tao)
;
Liu, W (Liu, Wei)
;
Ma, H (Ma, Hang)
;
Seeram, NP (Seeram, Navindra P.)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2017/03/23
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
作者:
Zheng, QW (Zheng, Qiwen)
;
Cui, JW (Cui, Jiangwei)
;
Liu, MX (Liu, Mengxin)
;
Su, DD (Su, Dandan)
;
Zhou, H (Zhou, Hang)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2017/12/05
Silicon-on-insulator
Total Ionizing Dose
Static Random Access Memory
Static Noise Margin
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation
期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
作者:
Ma, T (Ma, Teng)
;
Zheng, QW (Zheng, Qi-Wen)
;
Cui, JW (Cui, Jiang-Wei)
;
Zhou, H (Zhou, Hang)
;
Su, DD (Su, Dan-Dan)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2017/12/14
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process
期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
作者:
Zheng, QW (Zheng Qi-Wen)
;
Cui, JW (Cui Jiang-Wei)
;
Wang, HN (Wang Han-Ning)
;
Zhou, H (Zhou Hang)
;
Yu, DZ (Yu De-Zhao)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2016/12/12
total ionizing dose effects
deep sub-micron
metal oxide semiconductor field effect transistor
static random access memory
Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors
期刊论文
CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 7
作者:
Zheng, QW (Zheng, Qi-Wen)
;
Cui, JW (Cui, Jiang-Wei)
;
Zhou, H (Zhou, Hang)
;
Yu, DZ (Yu, De-Zhao)
;
Yu, XF (Yu, Xue-Feng)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2016/12/07
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect
期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
作者:
Zhou, H (Zhou Hang)
;
Zheng, QW (Zheng Qi-Wen)
;
Cui, JW (Cui Jiang-Wei)
;
Yu, XF (Yu Xue-Feng)
;
Guo, Q (Guo Qi)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2016/12/12
silicon-on-insulator
ionizing radiation
hot carriers
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