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Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices
期刊论文
FRONTIERS IN MATERIALS, 2022, 卷号: 9
作者:
Lu, Guangbao
;
Liu, Jun
;
Zheng, Qirong
;
Li, Yonggang
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/12/23
total ionizing dose effect
dynamic modeling
doubly-hydrogenated oxygen vacancy
microscopic mechanism
MOS devices
Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9
作者:
Wu, P (Wu, Ping) [1] , [2]
;
Wen, L (Wen, Lin) [3] , [4]
;
Xu, ZQ (Xu, Zhi-Qian) [1] , [2]
;
Jiang, YS (Jiang, Yun-Sheng) [1] , [2]
;
Guo, Q (Guo, Qi) [3] , [4]
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/04/07
Integrated circuit
Totalionizingdose
Electromagneticradiation
Synergistic effect
Combined environment
Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:
Cui, X (Cui, Xu) [1] , [2] , [3]
;
Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3]
;
Wei, Y (Wei, Ying) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2022/06/21
FinFET
1/f noise
TlD
CVS
bias dependence
Impact of High TID Irradiation on Stability of 65 nm SRAM Cells
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:
Cui, JW (Cui, Jiangwei) [1]
;
Zheng, QW (Zheng, Qiwen) [1]
;
Li, YD (Li, Yudong) [1]
;
Guo, Q (Guo, Qi) [1]
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/21
SRAM cells
Radiation effects
Arrays
Stability criteria
Circuit stability
Voltage measurement
Logic gates
Stability
static random-access memory (SRAM) cell
total ionizing dose (TID)
Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier
期刊论文
AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6
作者:
Xiang, CAF (Xiang, Chuanfeng) 1 , 2
;
Yao, S (Yao, Shuai) 1 , 3
;
Lu, W (Lu, Wu) 1 , 2
;
Li, XL (Li, Xiaolong) 1
;
Yu, X (Yu, Xin) 1
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  |  
浏览/下载:32/0
  |  
提交时间:2021/08/06
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:
Ren, ZX (Ren, Zhexuan)
;
1An, X (An, Xia) 1
;
Li, GS (Li, Gensong) 1
;
Liu, JY (Liu, Jingyi) 1
;
Xun, MZ (Xun, Mingzhu) 2
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2021/09/22
65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325
作者:
Ren, ZX (Ren, Zhexuan)[ 1 ]
;
An, X (An, Xia)[ 1 ]
;
Li, GS (Li, Gensong)[ 1 ]
;
Chen, G (Chen, Gong)[ 1 ]
;
Li, M (Li, Ming)[ 1 ]
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2020/09/09
Bulk Si FinFET
fin width
orientation
PMOS
threshold voltage shift
total ionizing dose (TID)
130nm部分耗尽绝缘体上硅工艺晶体管总剂量效应及模型研究
学位论文
中国科学院新疆理化技术研究所: 中国科学院大学, 2019
作者:
席善学
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/07/15
总剂量效应
部分耗尽
浅槽隔离
模型
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