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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：西安交通大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文 ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900 作者:  Zhu, Tianhua;  Zhuo, Fang 收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19 high-current applications  wire bonding  power density  avalanche-suppressed method  gallium compounds  GaN  integral package  lead bonding  single gate driver  field effect transistor switches  MOSFET  DHEMT integrated cascode switch  high electron mobility transistors  paralleled depletion-mode high-electron-mobility transistors  wide band gap semiconductors  cascode transistors  silicon-MOSFET  Si  potential unbalanced current sharing  cost reduction  optimised symmetric configuration  high-current cascode gallium nitride switch  III-V semiconductors  semiconductor device packaging   Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 824-831 作者:  Lu, Xing;  Yu, Kun;  Jiang, Huaxing;  Zhang, Anping;  Lau, Kei May 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26 low pressure chemical vapor deposition (LPCVD) SiNx  interface traps  current collapse  passivation  AlGaN/GaN MIS high electron mobility transistors (MISHEMTs)   Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion 期刊论文 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 卷号: 214 作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Wang, Yun-Hsiang;  Zhao, Cezhou 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26 high electron mobility transistors  GaN  buck converters  metal-insulator-semiconductor structures  AlGaN   Comparative Study of Depletion and Enhancement Mode AlGaN/GaN High Electron Mobility Transistors 学位论文 2016 作者:  Makhdoom Shahid Hussain 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 AlGaN/GaN HEMT，耗尽型，增强型，栅沟槽，氟等离子处理   A method for suppressing electromagnetic interference of GaN converter utilizing balance and filter technologies 期刊论文 Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2016, 卷号: 50, 期号: [db:dc_citation_issue], 页码: 38-42 and 131 作者:  Zhao, Kai;  Wang, Chuang;  Li, Zunchao;  Zhao, Lijuan 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/02 BOOST converter  Converter  Electromagnetic interference reductions  Filter  Filter techniques  Gan high electron mobility transistors  High frequency HF  Parasitic parameter   Off-state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si 会议论文 作者:  Jiang, Huaxing;  Lu, Xing;  Liu, Chao;  Li, Qiang;  Lau, Kei May 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02 metal-oxide-semiconductor structures  high electron mobility transistors  GaN  annealing  metallization  drain leakage   Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 卷号: 31, 期号: [db:dc_citation_issue] 作者:  Lu, Xing;  Jiang, Huaxing;  Liu, Chao;  Zou, Xinbo;  Lau, Kei May 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/02 post-gate annealing  surface treatment  AlGaN/GaN  HEMT  off-state leakage current   Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs 会议论文 作者:  Yu, Kun;  Liu, Chao;  Jiang, Huaxing;  Lu, Xing;  Lau, Kei May 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 AlGaN/GaN MIS-HEMTs  Current collapse  I-V measurements  Interface traps  LPCVD SiNx  Metal insulator semiconductor high electron mobility transistors (MISHEMT)  Passivation layer  Plasma enhanced chemical vapor depositions (PE CVD)