| Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs | |
| Yu, Kun; Liu, Chao; Jiang, Huaxing; Lu, Xing; Lau, Kei May; Zhang, Anping | |
| 2016 | |
| 关键词 | AlGaN/GaN MIS-HEMTs Current collapse I-V measurements Interface traps LPCVD SiNx Metal insulator semiconductor high electron mobility transistors (MISHEMT) Passivation layer Plasma enhanced chemical vapor depositions (PE CVD) |
| 页码 | 297-300 |
| 会议录 | CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2952118 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Yu, Kun,Liu, Chao,Jiang, Huaxing,et al. Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs[C]. 见:. |
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