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科研机构
半导体研究所 [7]
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会议论文 [4]
期刊论文 [3]
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半导体物理 [7]
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Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
Anisotropic transport in quantum waveguides due to the spin-orbit interactions
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052108
Wang M
;
Chang K
;
Chan KS
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  |  
浏览/下载:179/51
  |  
提交时间:2010/03/08
crystal orientation
electric admittance
electron waveguides
quantum interference phenomena
spin-orbit interactions
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
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  |  
浏览/下载:182/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y
;
Zhu XP
;
Song GF
;
Cao Q
;
Guo L
;
Li YZ
;
Chen LH
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  |  
浏览/下载:164/42
  |  
提交时间:2010/03/29
quantum well intermixing
Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y
;
Zhu XP
;
Gan QQ
;
Song GF
;
Cao Q
;
Guo, L
;
Li YZ
;
Chen LH
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  |  
浏览/下载:575/277
  |  
提交时间:2010/03/29
valence band mixing
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
Crystallographic and magnetic properties of nitride R3Fe29-xCrxN4 (R = Y, Ca, Nd, Sm, Gd, Tb, and Dy)
期刊论文
journal of applied physics, 1998, 卷号: 83, 期号: 8, 页码: 4366-4372
Han XF
;
Yang FM
;
Pan HG
;
Wang YG
;
Wang YZ
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/08/12
CRYSTAL-STRUCTURE
CR
ANISOTROPY
COMPOUND
PHASE
T=TI
MN
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