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科研机构
半导体研究所 [14]
内容类型
期刊论文 [12]
会议论文 [2]
发表日期
2007 [1]
2006 [1]
2004 [2]
2003 [1]
2002 [4]
2000 [1]
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学科主题
半导体材料 [14]
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Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE
期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Wang XY (Wang Xiaoyan)
;
Wang XL (Wang Xiaoliang)
;
Wang BZ (Wang Baozhu)
;
Xiao HL (Xiao Hongling)
;
Wang JX (Wang Junxi)
;
Zeng YP (Zeng Yiping)
;
Li AN (Li Antnin)
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
Synthesis of GaN nanorods with vertebra-like morphology
会议论文
ieee international conference of nano/micro engineered and molecular systems, zhuhai, peoples r china, jan 18-21, 2006
Gao, HY (Gao, Haiyong)
;
Li, JM (Li, Jinmin)
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  |  
浏览/下载:112/30
  |  
提交时间:2010/03/29
GaN nanorods
Ga2O3/ZnO films
nitritding
morphology
CHEMICAL-VAPOR-DEPOSITION
FILMS
Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides
期刊论文
半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1205-1210
Sun Guosheng
;
Zhang Yongxing
;
Gao Xin
;
Wang Junxi
;
Wang Lei
;
Zhao Wanshun
;
Wang Xiaoliang
;
Zeng Yiping
;
Li Jinmin
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/23
Large-scale synthesis of single-phase, high-quality GaN nanocrystallites
期刊论文
applied physics a-materials science & processing, 2004, 卷号: 78, 期号: 5, 页码: 753-755
Wang JC
;
Yu DP
;
Li CY
;
Zhou JF
;
Wang YZ
;
Feng SQ
收藏
  |  
浏览/下载:230/78
  |  
提交时间:2010/03/09
LIGHT-EMITTING-DIODES
Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation
期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 1-8
Luo MC
;
Li JM
;
Wang QM
;
Sun GS
;
Wang L
;
Li GR
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
infrared reflectivity
Raman
sapphire substrate
X-ray diffraction
chemical vapor deposition
SiC
GAN
FILMS
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
期刊论文
silicon carbide and related materials 2001 pts 1 and 2 proceedings, 2002, 卷号: 389-3, 期号: 0, 页码: 339-342
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
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  |  
浏览/下载:78/0
  |  
提交时间:2010/08/12
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE
期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235
Luo MC
;
Wang XL
;
Li JM
;
Liu HX
;
Wang L
;
Sun DZ
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/08/12
atomic force microscopy
Raman
transmission electron microscopy
molecular beam epitaxy
aluminium nitride
ELECTRON-AFFINITY
GAN
SI(111)
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 145-152
Lu DC
;
Duan SK
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  |  
浏览/下载:99/7
  |  
提交时间:2010/08/12
computer simulation
molecular vapor phase epitaxy
nitrides
semiconducting quaternary alloys
CHEMICAL-VAPOR-DEPOSITION
QUATERNARY ALLOYS
PHASE EPITAXY
GAN
ALINGAN
Quasi-thermodynamic analysis of MOVPE of AlGaN
期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 73-78
Lu DC
;
Duan S
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
AlGaN
thermodynamic
MOVPE
aluminium content
VAPOR-PHASE EPITAXY
GROWTH
NITRIDE
REGION
ALLOYS
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