Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE

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	Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE
	Luo MC ; Wang XL ; Li JM ; Liu HX ; Wang L ; Sun DZ ; Zeng YP ; Lin LY
刊名	journal of crystal growth
	2002
卷号	244 期号:3-4 页码:229-235
关键词	atomic force microscopy Raman transmission electron microscopy molecular beam epitaxy aluminium nitride ELECTRON-AFFINITY GAN SI(111)
ISSN号	0022-0248
通讯作者	luo mc,chinese acad sci,inst semicond,novel semicond mat lab,pob 912,beijing 100083,peoples r china.
中文摘要	epitaxial growth of aln has been performed by molecular beam epitaxy (mbe) with ammonia. the structural properties of materials were studied by cross-sectional transmission electron microscopy (tem), x-ray diffraction (xrd), and atomic force microscopy (afm). xrd and tem diffraction pattern confirm the aln is single crystalline 2h-polytype with the epitaxial relationship of (0001)alnparallel to(111)si, [11 (2) over bar0](aln)parallel to[110](si), [10 (1) over bar0](aln)parallel to[11 (2) over bar](si). micro-raman scattering measurement shows that the e-2 (high) and a(1) (lo) phonon mode shift 9 cm(-1) toward the low frequency, which shows the existence of large tensile strain in the aln films. furthermore, the appearance of forbidden a, (to) mode and its anomalous shift toward high frequency was found and explained. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11768]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo MC,Wang XL,Li JM,et al. Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE[J]. journal of crystal growth,2002,244(3-4):229-235.
APA	Luo MC.,Wang XL.,Li JM.,Liu HX.,Wang L.,...&Lin LY.(2002).Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE.journal of crystal growth,244(3-4),229-235.
MLA	Luo MC,et al."Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE".journal of crystal growth 244.3-4(2002):229-235.