Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE
	Wang XY (Wang Xiaoyan) ; Wang XL (Wang Xiaoliang) ; Wang BZ (Wang Baozhu) ; Xiao HL (Xiao Hongling) ; Wang JX (Wang Junxi) ; Zeng YP (Zeng Yiping) ; Li AN (Li Antnin)
刊名	physica status solidi a-applications and materials science
	2007
卷号	204 期号:10 页码:3405-3409
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	issn: 0031-8965
通讯作者	wang, xy, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	al0.58ga0.42n epilayers are grown by ammonia gas source molecular beam epitaxy (nh3-mbe) on (0001) sapphire substrate using algan buffer layer. the effects of the buffer layer growth temperature on the properties of al0.58ga0.42n epilayer are especially investigated. in-situ high-energy electron diffraction (rheed), double-crystal x-ray diffraction (dcxrd), atomic force microscopy (afm), photoconductivity measurement and cathodoluminescence (cl) are used to characterize the samples. it is found that high growth temperature of algan buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the al0.58ga0.42n epilayer. the likely reason for such improvements is also suggested. (c) 2007 wiley-vch verlag gmbh & co. kgaa, weinheim
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9218]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang XY ,Wang XL ,Wang BZ ,et al. Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE[J]. physica status solidi a-applications and materials science,2007,204(10):3405-3409.
APA	Wang XY .,Wang XL .,Wang BZ .,Xiao HL .,Wang JX .,...&Li AN .(2007).Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE.physica status solidi a-applications and materials science,204(10),3405-3409.
MLA	Wang XY ,et al."Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE".physica status solidi a-applications and materials science 204.10(2007):3405-3409.