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科研机构
半导体研究所 [74]
内容类型
期刊论文 [65]
会议论文 [9]
发表日期
2011 [3]
2010 [2]
2009 [3]
2008 [1]
2007 [6]
2006 [5]
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半导体材料 [74]
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Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling
期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081y
Huang, Wenchao
;
Xia, Hui
;
Wang, Shaowei
;
Deng, Honghai
;
Wei, Peng
;
Li, Lu
;
Liu, Fengqi
;
Li, Zhifeng
;
Li, Tianxin
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Capacitance
Carrier concentration
Characterization
Diffusion
Optoelectronic devices
Photodetectors
Scanning
Semiconductor device structures
Semiconductor devices
Semiconductor quantum wells
Thermionic emission
Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 11, 页码: 113509
Shi K (Shi K.)
;
Zhang PF (Zhang P. F.)
;
Wei HY (Wei H. Y.)
;
Jiao CM (Jiao C. M.)
;
Jin P (Jin P.)
;
Liu XL (Liu X. L.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/02/22
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:53/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Donor defect in P-diffused bulk ZnO single crystal
会议论文
29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009
Zhao YW (Zhao Youwen)
;
Zhang R (Zhang Rui)
;
Zhang F (Zhang Fan)
;
Dong ZY (Dong Zhiyuan)
;
Yang J (Yang Jun)
收藏
  |  
浏览/下载:463/158
  |  
提交时间:2010/10/11
Zinc Oxide
doping
defect
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.)
;
Huang AP (Huang A. P.)
;
Xiao ZS (Xiao Z. S.)
;
Yang ZC (Yang Z. C.)
;
Wang M (Wang M.)
;
Zhang XW (Zhang X. W.)
;
Wang WW (Wang W. W.)
;
Chu PK (Chu Paul K.)
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/14
OXYGEN
GATE
DIFFUSION
FILMS
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy
期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ
;
Chang BK
;
Yang Z
;
Niu J
;
Xiong YJ
;
Shi F
;
Guo H
;
Zeng YP
收藏
  |  
浏览/下载:65/25
  |  
提交时间:2010/03/08
GAAS PHOTOCATHODES
GALLIUM-ARSENIDE
ALXGA1-XAS
DIFFUSION
SURFACE
ENERGY
Mn-AlInN: a new diluted magnetic semiconductor
期刊论文
applied physics a-materials science & processing, 2009, 卷号: 96, 期号: 4, 页码: 979-984
Majid A
;
Sharif R
;
Zhu JJ
;
Ali A
收藏
  |  
浏览/下载:67/4
  |  
提交时间:2010/03/08
FILMS
GROWTH
GAN
CR
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Mn-including InAs quantum dots fabricated by Mn implantation
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 9, 页码: 2869-2873
Hu, LJ
;
Chen, YH
;
Ye, XL
;
Jiao, YH
;
Shi, LW
;
Wang, ZG
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
Mn-including
InAs quantum dots
PL
magnetic
Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode
期刊论文
applied optics, 2007, 卷号: 46, 期号: 28, 页码: 7035-7039
Yang Z (Yang Zhi)
;
Chang B (Chang Benkang)
;
Zou J (Zou Jijun)
;
Qiao J (Qiao Jianliang)
;
Gao P (Gao Pin)
;
Zeng Y (Zeng Yiping)
;
Li H (Li Hui)
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2010/03/29
ACTIVATED GAAS
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