Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy

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	Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy
	Zhang YJ ; Chang BK ; Yang Z ; Niu J ; Xiong YJ ; Shi F ; Guo H ; Zeng YP
刊名	applied optics
	2009
卷号	48 期号:9 页码:1715-1720
关键词	GAAS PHOTOCATHODES GALLIUM-ARSENIDE ALXGA1-XAS DIFFUSION SURFACE ENERGY
ISSN号	0003-6935
通讯作者	chang bk nanjing univ sci & technol inst elect engn & optoelect nanjing 210094 peoples r china. e-mail address: bkchang@mail.njust.edu.cn
中文摘要	we measured the carrier concentration distribution of gradient-doped gaas/gqalas epilayers grown by molecular beam epitaxy before and after annealing at 600 degrees c, using electrochemical capacitance voltage profiling, to investigate the internal variation of transmission-mode gaas photocathodes arising from the annealing process. the results show that the carrier concentration increased after annealing. as a result, the total band-bending energy in the gradient-doped gaas emission layer increased by 25.24% after annealing, which improves the pbotoexcited electron movement toward the surface. on the other hand, the annealing process resulted in a worse carrier concentration discrepancy between the gaas and the gaalas, which causes a lower back interface potential barrier, decreasing the amount of high-energy photoelectrons. (c) 2009 optical society of america
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china (nsfc) 60678043 60801036the authors would like to thank jijun zou for useful discussion and xiaobing xu for ecv measurement. this work was supported by the national natural science foundation of china (nsfc) (grants 60678043 and 60801036).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7263]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang YJ,Chang BK,Yang Z,et al. Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy[J]. applied optics,2009,48(9):1715-1720.
APA	Zhang YJ.,Chang BK.,Yang Z.,Niu J.,Xiong YJ.,...&Zeng YP.(2009).Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy.applied optics,48(9),1715-1720.
MLA	Zhang YJ,et al."Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy".applied optics 48.9(2009):1715-1720.