Mn-AlInN: a new diluted magnetic semiconductor

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Mn-AlInN: a new diluted magnetic semiconductor
	Majid A ; Sharif R ; Zhu JJ ; Ali A
刊名	applied physics a-materials science & processing
	2009
卷号	96 期号:4 页码:979-984
关键词	FILMS GROWTH GAN CR
ISSN号	0947-8396
通讯作者	majid a quaid i azam univ dept phys adv mat phys lab islamabad pakistan. e-mail address: abdulmajid40@yahoo.com ; akbar@qau.edu.pk
中文摘要	mn ions have been incorporated into mocvd grown al1-x in (x) n/gan thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. magnetic characterizations revealed the presence of two ferromagnetic transitions one has curie points at similar to 260 k and the other above room temperature. in-diffusion of indium caused by the mn implantation leads to the partition of alinn epilayer into two diluted magnetic semiconductor sub-layers depending on the mn concentration. the curie temperature of 260 k is assigned to the layer having lower concentration, whereas t (c) above room temperature is assumed to be associated to the layer having higher mn concentration.
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china 60506001 6047602160576003higher education commission (hec) of pakistan
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7069]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Majid A,Sharif R,Zhu JJ,et al. Mn-AlInN: a new diluted magnetic semiconductor[J]. applied physics a-materials science & processing,2009,96(4):979-984.
APA	Majid A,Sharif R,Zhu JJ,&Ali A.(2009).Mn-AlInN: a new diluted magnetic semiconductor.applied physics a-materials science & processing,96(4),979-984.
MLA	Majid A,et al."Mn-AlInN: a new diluted magnetic semiconductor".applied physics a-materials science & processing 96.4(2009):979-984.