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CORC

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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:  Cui, X (Cui, Xu) [1] , [2] , [3];  Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3];  Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3];  Wei, Y (Wei, Ying) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21
Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 卷号: 124, 期号: 41, 页码: 22793-22798
作者:  Dai, Chaoqi;  Qi, Guoqiang;  Qiao, Hai;  Wang, Weiliang;  Xiao, Han
收藏  |  浏览/下载：16/0  |  提交时间：2020/12/16
Research on Radiation-Induced Threshold Voltage Shifts in Power MOSFET Based on Charge-Pumping Method 会议论文
作者:  Ding Y(丁艳);  Wang LX(王立新);  Zhang YF(张彦飞);  Liu MX(刘梦新)
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/13
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08
Influences of total ionizing dose on single event effect sensitivity in floating gate cells 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 8, 页码: 086103
作者:  Zhao, Pei-Xiong;  Liu, Tian-Qi;  Ye, Bing;  Luo, Jie;  Sun, You-Mei
收藏  |  浏览/下载：33/0  |  提交时间：2018/10/08
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27
Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs 会议论文
作者:  Cui, Miao;  Cai, Yutao;  Lam, Sang;  Liu, Wen;  Zhao, Chun
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26
An Amidine-Type n-Dopant for Solution-Processed Field-Effect Transistors and Perovskite Solar Cells 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2017, 卷号: 27, 期号: 41
作者:  Hu, Lin;  Liu, Tiefeng;  Duan, Jiashun;  Ma, Xiaoyi;  Ge, Congwu
收藏  |  浏览/下载：45/0  |  提交时间：2018/01/15
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology 期刊论文
2016, 2016
QIAO FengYing; PAN LiYang; YU Xiao; MA HaoZhi; WU Dong; XU Jun; QIAO FengYing; PAN LiYang; YU Xiao; MA HaoZhi; WU Dong; XU Jun
收藏  |  浏览/下载：4/0
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8, 页码: 1-6
作者:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  Liu, YR (Liu Yu-Rong);  Wang, X (Wang Xin);  En, YF (En Yun-Fei)
收藏  |  浏览/下载：23/0  |  提交时间：2018/01/25

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