| Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs | |
| Cui, Miao; Cai, Yutao; Lam, Sang; Liu, Wen; Zhao, Chun; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R. | |
| 2018 | |
| 关键词 | AlGaN/GaN MIS-HEMTs Frequency dependence Frequency independent High-voltage switching Metal-insulator-semiconductors MIS-HEMT Threshold voltage shifts Voltage hysteresis |
| 会议录 | 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
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| URL标识 | 查看原文 |
| ISSN号 | 9781538662342 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2921475 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Cui, Miao,Cai, Yutao,Lam, Sang,et al. Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs[C]. 见:. |
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