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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:
Cheng, Wangping
;
Li, Chenhui
;
Zhou, Chen
;
He, Yuandi
;
Wei, Renhuai
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/12/23
Resistive random access memory
Resistive switching
Self-rectifying behavior
Copper chromium oxide
Thin film
Solution deposition
The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Defect engineering in novel broad-band gap hexaaluminate MAl12O19 (M=Ca, sr, Ba)-Based photocatalysts Boosts Near ultraviolet and visible light-driven photocatalytic performance
期刊论文
Materials Today Chemistry, 2022, 卷号: 24
作者:
Wang, S.
;
Gao, H.
;
Jin, Y.
;
Chen, X.
;
Wang, F.
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2022/06/20
Aluminum compounds
Aromatic compounds
Cerium oxide
Charge carriers
Energy gap
Ions
Light
Manganese
Manganese oxide
Oxides
Photocatalytic activity
Strontium compounds
Al-ions
Defect engineering
Light response
Light response ability
Mn ions
Near ultraviolet
Organic dye
P-n heterojunctions
Polyacrylamide gel method
Response ability
Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property
期刊论文
ACTA PHYSICO-CHIMICA SINICA, 2022, 卷号: 38, 期号: 5, 页码: 8
作者:
Zou, Jingyun
;
Gao, Bing
;
Zhang, Xiaopin
;
Tang, Lei
;
Feng, Simin
收藏
  |  
浏览/下载:72/0
  |  
提交时间:2022/01/27
Single-walled carbon nanotube
Molybdenum disulfide
Dimension
Heterostructure
Charge transfer
Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors
期刊论文
Advanced Materials, 2022, 卷号: 34, 期号: 39, 页码: 10
作者:
F. Wang
;
Z. Y. Liu
;
T. Zhang
;
M. S. Long
;
X. X. Wang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2023/06/14
Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction
期刊论文
Crystengcomm, 2022, 卷号: 24, 期号: 38, 页码: 6642-6653
作者:
X. J. Liu
;
M. S. Liu
;
R. D. Zhu
;
B. H. Li
;
P. Wan
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2023/06/14
Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2021, 卷号: 198
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2021/10/14
Graphene
InP
Heterostructure
Vertical strain
Electric field
Schottky barrier
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
Vacuum, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2021/06/03
Optoelectronic devices
Schottky barrier diodes
Van der Waals forces
Electronic performance
Electronics devices
External strains
First principle calculations
Optoelectronics devices
P-type
Schottky barriers
Schottky contacts
Si$-3$/N$-4$
Van der Waal
Turning electronic performance and Schottky barrier of graphene/beta-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
VACUUM, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2021/06/03
Effects of doping graphene on the performance of graphene-silicon hybrid photoconductive detectors
期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 48, 页码: 9
作者:
Fu, JinTao
;
Que, Longcheng
;
Jiang, Hao
;
Luo, Wei
;
Nie, Changbin
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2020/12/01
graphene film
photoconductive detector
doping effects
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