Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property

doi:10.3866/PKU.WHXB202008037

CORC > 金属研究所 > 中国科学院金属研究所

	Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property
	Zou, Jingyun 1,2; Gao, Bing 3; Zhang, Xiaopin 3; Tang, Lei 1,2; Feng, Simin 1,2; Jin, Hehua 3; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,4
刊名	ACTA PHYSICO-CHIMICA SINICA
	2022-05-15
卷号	38 期号:5 页码:8
关键词	Single-walled carbon nanotube Molybdenum disulfide Dimension Heterostructure Charge transfer
ISSN号	1000-6818
DOI	10.3866/PKU.WHXB202008037
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
英文摘要	A unique mixed-dimensional van der Waals heterostructure can be formed by integrating one-dimensional (1D) and two-dimensional (2D) materials. Such a 1D/2D mixed-dimensional heterostructure will not only inherit the unique properties of 2D/2D heterostructures, but also has a variety of stacking configurations, offering a new platform to adjust its structure and properties. The combination of p-type 1D single-walled carbon nanotubes (SWCNTs) and n-type 2D molybdenum disulfide (MoS2) is one such example, possessing tunable properties. In situ chemical vapor deposition (CVD) is one of the most effective methods to construct 1D SWCNT/2D MoS2 mixed-dimensional heterostructures. There are several reports of successfully grown SWCNT/MoS2 heterostructures. The reports indicate that these heterostructures exhibit strong electrical and mechanical couplings between the SWCNTs and MoS2, making it suitable for the construction of high-performance electronic and optoelectronic devices. However, there are still several problems associated with the in situ CVD growth of SWCNT/MoS2 heterostructures. First, the growth mechanism of the 1D SWCNT/2D MoS2 heterostructure is unclear. We still do not know how the existence of small-diameter SWCNTs will affect the nucleation and growth process of MoS2. It is undetermined whether MoS2 flakes will grow above the preexisting SWCNTs or under them. Second, current studies all report the growth of MoS2 on a substrate sparsely covered by SWCNTs, which have a wide chirality distribution. Since the chirality of SWCNTs determines their physical properties and the density of SWCNTs significantly affects its performance in electronic devices, both the low density and wide chirality distribution of SWCNTs reported in these studies impose negative impacts on the interface behavior of SWCNT/MoS2 heterostructures and their performance in devices. Herein, we report the preparation of high-quality 1D SWCNT/2D MoS2 heterostructures by directly growing MoS2 on dense and narrow-chirality distributed SWCNTs on a silicon substrate. To achieve this goal, high-purity semiconducting SWCNTs with narrow chirality distributions were sorted from the raw arc-discharged SWCNTs, and then high-density SWCNT arrays or networks were formed on a silicon substrate by dip-coating. Through in-depth analyses of the surface morphology and structure of the nuclei, we found that MoS2 may prefer to grow under the SWCNTs and will grow much faster in the grooves between the SWCNTs to form a growth front. Therefore, an interesting "absorption-diffusion-absorption" growth mechanism has been proposed to explain the nucleation and growth process of SWCNT/MoS2 heterostructures. In addition, we confirm the presence of strong charge coupling in the mixed-dimensional heterostructure through Raman analysis. Carriers can be quickly transferred through the interface between the SWCNTs and MoS2, paving a way for the future design and fabrication of novel electronic and optoelectronic devices based on 1D/2D heterostructures.
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Graphene Manufacturing Innovation Center Project of Shenzhen Industry and Information Technology Bureau[201901171523]
WOS研究方向	Chemistry
语种	英语
出版者	PEKING UNIV PRESS
WOS记录号	WOS:000722096000010
资助机构	National Natural Science Foundation of China ; Graphene Manufacturing Innovation Center Project of Shenzhen Industry and Information Technology Bureau
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/167527]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Guangdong, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Guangdong, Peoples R China 3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Jiangsu, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Zou, Jingyun,Gao, Bing,Zhang, Xiaopin,et al. Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property[J]. ACTA PHYSICO-CHIMICA SINICA,2022,38(5):8.
APA	Zou, Jingyun.,Gao, Bing.,Zhang, Xiaopin.,Tang, Lei.,Feng, Simin.,...&Cheng, Hui-Ming.(2022).Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property.ACTA PHYSICO-CHIMICA SINICA,38(5),8.
MLA	Zou, Jingyun,et al."Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property".ACTA PHYSICO-CHIMICA SINICA 38.5(2022):8.