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Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga
2
O
3
power diodes
期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123
作者:
Liu, Jinyang
;
Han, Zhao
;
Ren, Lei
;
Yang, Xiao
;
Xu, Guangwei
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2023/11/10
A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
期刊论文
JOURNAL OF COMPUTATIONAL PHYSICS, 2022, 卷号: 458, 页码: 24
作者:
Zhang, Qianru
;
Wang, Qin
;
Zhang, Linbo
;
Lu, Benzhuo
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2023/02/07
Three-dimensional drift -diffusion model
Averaging technique
Finite element method
Semiconductor device
Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier
期刊论文
ACTA PHYSICA SINICA, 2021, 卷号: 70
作者:
Xu Da-Lin
;
Wang Yu-Qi
;
Li Xin-Hua
;
Shi Tong-Fei
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2021/04/26
trench-gate-type super barrier rectifier
charge coupling
breakdown voltage
stepped oxide
A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 987
作者:
Fang, Yuman
;
Gou, Yongsheng
;
Zhang, Minrui
;
Wang, Junfeng
;
Tian, Jinshou
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/01/28
Image intensifier
ICCD camera
MOSFET switching
Ultrafast imaging
Nanosecond pulse generation
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design
会议论文
Guilin, China, June 4-6, 2021
作者:
Cheng H(程贺)
;
Zhang C(张超)
;
Liu TF(刘铁锋)
;
Xie C(谢闯)
;
Yang ZJ(杨志家)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2022/02/04
ballistic transport
compact model
integrated-cricuit design
sub-7 nm GAA MOSFET
the source-drain tunneling
The open-pin failure of power device under the combined effect of thermo-migration and electro-migration
期刊论文
Chinese Science Bulletin, 2020, 卷号: 65, 期号: 20, 页码: 2169-2177
作者:
Gao Liyin
;
Li Caifu
;
Cao Lihua
;
Liu Zhiquan
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2021/02/03
A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 2002-2006
作者:
Ren, Yu
;
Yang, Xu
;
Zhang, Fan
;
Wang, Fei
;
Tolbert, Leon M.
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/11/19
Gate drivers
Integrated circuit reliability
MOS-FET
Series connections
SiC MOSFET
Solid State Circuit Breaker
Voltage balancing
Wide band gap devices
Prediction of Stable and High-Performance Charge Transport in Zigzag Tellurene Nanoribbons
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 5
作者:
Lv, Yawei
;
Liu, Yuan
;
Qin, Wenjing
;
Chang, Sheng
;
Jiang, Changzhong
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/12/05
Current density
edge saturation
first principles
MOSFET
tellurene nanoribbon (TNR)
Prediction of Stable and High-Performance Charge Transport in Zigzag Tellurene Nanoribbons
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.5, 页码: 2365-2369
作者:
Yawei Lv
;
Yuan Liu
;
Wenjing Qin
;
Sheng Chang
;
Changzhong Jiang
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/12/13
Bonding
Transistors
Nanoribbons
Photonic band gap
Physics
Graphene
Discrete Fourier transforms
Current density
edge saturation
first principles
MOSFET
tellurene nanoribbon (TNR)
Prediction of Stable and High-Performance Charge Transport in Zigzag Tellurene Nanoribbons.
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.5, 页码: 2365-2369
作者:
Lv, YW
;
Liu, Y
;
Qin, WJ
;
Chang, S
;
Jiang, CZ
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/12/17
Current density
edge saturation
first principles
MOSFET
tellurene nanoribbon (TNR)
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