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Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint 期刊论文
NANO RESEARCH, 2020, 卷号: 14, 期号: 1, 页码: 232-238
作者:  Dai, Chaoqi;  Chen, Peiqin;  Qi, Shaocheng;  Hu, Yongbin;  Song, Zhitang
收藏  |  浏览/下载：4/0  |  提交时间：2020/12/16
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 6
作者:  He, Jiawei;  Li, Guoli;  Lv, Yawei;  Wang, Chunlan;  Liu, Chuansheng
收藏  |  浏览/下载：28/0  |  提交时间：2019/12/05
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 6
作者:  He, Jiawei;  Li, Guoli;  Lv, Yawei;  Wang, Chunlan;  Liu, Chuansheng
收藏  |  浏览/下载：14/0  |  提交时间：2019/12/05
Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 1, 页码: 36-39
作者:  Cai, Wensi;  Wilson, Joshua;  Zhang, Jiawei;  Park, Seonghyun;  Majewski, Leszek
收藏  |  浏览/下载：46/0  |  提交时间：2019/12/11
Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 792, 页码: 543-549
作者:  Ma, Pengfei;  Sun, Jiamin;  Zhang, Guanqun;  Liang, Guangda;  Xin, Qian
收藏  |  浏览/下载：14/0  |  提交时间：2019/12/11
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: Vol.5 No.6
作者:  He, JW;  Li, GL;  Lv, YW;  Wang, CL;  Liu, CS
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:  Liang, Lingyan;  Wu, Weihua;  Cao, Hongtao;  Lan, Linfeng;  Yao, Meiyi
收藏  |  浏览/下载：29/0  |  提交时间：2018/12/04
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:  Wu, Weihua;  Liang, Yu;  Cao, Hongtao;  Lan, Linfeng;  Yao, Meiyi
收藏  |  浏览/下载：29/0  |  提交时间：2018/12/04
Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter 期刊论文
Journal of Alloys and Compounds, 2018
作者:  Q.B. Lin;  C. Zhang;  G. He;  B. Yang;  L. Zhu
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies 期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 卷号: 12, 页码: 407-412
作者:  Qin, Cunping[1];  Yang, Jun[2];  Wang, Bowen[3];  Xu, Tao[4];  Ding, Xingwei[5]
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22

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