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	Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device
	Ma, Pengfei; Sun, Jiamin; Zhang, Guanqun; Liang, Guangda; Xin, Qian; Li, Yuxiang; Song, Aimin
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2019
卷号	792页码:543-549
关键词	HfAlO High-k Gate insulator A-InGaZnO Thin-film transistor Atomic layer deposition Low-power device
DOI	10.1016/j.jallcom.2019.04.015
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4537124
专题	山东大学
作者单位	Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong,
推荐引用方式 GB/T 7714	Ma, Pengfei,Sun, Jiamin,Zhang, Guanqun,et al. Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,792:543-549.
APA	Ma, Pengfei.,Sun, Jiamin.,Zhang, Guanqun.,Liang, Guangda.,Xin, Qian.,...&Song, Aimin.(2019).Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device.JOURNAL OF ALLOYS AND COMPOUNDS,792,543-549.
MLA	Ma, Pengfei,et al."Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device".JOURNAL OF ALLOYS AND COMPOUNDS 792(2019):543-549.

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