| Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor | |
| He, Jiawei; Li, Guoli; Lv, Yawei; Wang, Chunlan; Liu, Chuansheng; Li, Jinchai; Flandre, Denis; Chen, Huipeng; Guo, Tailiang; Liao, Lei | |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 2019 | |
| 卷号 | 5期号:6 |
| 关键词 | amorphous oxide semiconductor bilayer stack defect self-compensation high mobility thin-film transistor |
| ISSN号 | 2199-160X |
| DOI | 10.1002/aelm.201900125 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4216092 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | He, Jiawei,Li, Guoli,Lv, Yawei,et al. Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(6). |
| APA | He, Jiawei.,Li, Guoli.,Lv, Yawei.,Wang, Chunlan.,Liu, Chuansheng.,...&Liao, Lei.(2019).Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor.ADVANCED ELECTRONIC MATERIALS,5(6). |
| MLA | He, Jiawei,et al."Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor".ADVANCED ELECTRONIC MATERIALS 5.6(2019). |
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