Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2018专题

	Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
	Liang, Lingyan; Wu, Weihua; Cao, Hongtao; Lan, Linfeng; Yao, Meiyi; Song, Anran; Liang, Yu; Yu, Jingjing; Javaid, Kashif
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2018
卷号	18 期号:11 页码:7566-7572
关键词	Amorphous Oxide Semiconductors Field-effect Transistors Low-temperature Gate Dielectrics Low-voltage Photochemical Activation Electrical Performance Combustion Synthesis High-mobility Electronics
英文摘要	Aqueous solution induced method is regarded as a promising route to realize high-performance metal oxide thin film transistors at low temperature with an economical and environment friendly process. In this paper, we report the synthesis of multi-component AlOx : Y dielectrics with a small amount of yttrium homogeneously distributed in AlOx matrix through an alternate spin-coating process. The AlOx : Y films demonstrate superior characteristics, such as improved surface morphology, better capacitance coupling effect, smaller dielectric dispersion, and similar leakage current density compared to AlOx films of nearly twofold thickness. By elevating the pre-baking temperature, the dielectric performance of AlOx : Y films has been further optimized, exhibiting a near-atomically smooth surface, a low current density of 8 x 2x10(-8) A cm(-2) at 2 MV/cm, and a dielectric constant of 7.4. And the corresponding thin-film transistor with amorphous InGaZnO channel shows a narrow working voltage range (< 2.5 V), a field-effect mobility around 10 cm(2) V-1 s(-1), and an on/off current ratio exceeding 107 coupled with the gate current lower than 1 nA in the entire operation range.
学科主题	Materials Science ; Physics
语种	英语
公开日期	2018-12-04
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17079]
专题	2018专题
推荐引用方式 GB/T 7714	Liang, Lingyan,Wu, Weihua,Cao, Hongtao,et al. Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18(11):7566-7572.
APA	Liang, Lingyan.,Wu, Weihua.,Cao, Hongtao.,Lan, Linfeng.,Yao, Meiyi.,...&Javaid, Kashif.(2018).Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18(11),7566-7572.
MLA	Liang, Lingyan,et al."Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18.11(2018):7566-7572.