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The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
期刊论文
IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99
作者:
Chen, Xiaoming
;
Sun, Xiaoyu
;
Wang, Panni
;
Datta, Suman
;
Hu, Xiaobo Sharon
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2020/12/10
Iron
Transistors
Computer architecture
Switches
Capacitance
Logic gates
Computational modeling
Ferroelectric Field Effect Transistor
FeFET
Negative Capacitance Field Effect Transistor
NCFET
Preisach model
FPGAs
content addressable memories
CAM
TCAM
compute-in-memory
analog synapse
Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint
期刊论文
ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 6
作者:
Qi, Shaocheng
;
Cunha, Joao
;
Guo, Tian-Long
;
Chen, Peiqin
;
Zaccaria, Remo Proietti
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2020/12/16
THIN-FILM TRANSISTORS
INTEGRATED-CIRCUITS
MEMORY
Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint
期刊论文
NANO RESEARCH, 2020, 卷号: 14, 期号: 1, 页码: 232-238
作者:
Dai, Chaoqi
;
Chen, Peiqin
;
Qi, Shaocheng
;
Hu, Yongbin
;
Song, Zhitang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/12/16
LOGIC GATES
MEMORY
FILM
REALIZATION
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
期刊论文
IEEE Access, 2019, 卷号: Vol.7, 页码: 79989-79996
作者:
Shuyun Zheng
;
Yun Zeng
;
Zhuojun Chen
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/13
Field effect transistors
Semiconductor device modeling
Degradation
Electric potential
Logic gates
Molybdenum
Transition metal dichalcogenide (TMD)
field-effect transistor (FET)
total ionizing dose (TID)
surface potential
compact model
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:
Hongliang Zhao
;
Lin-An Yang
;
Hao Zou
;
Xiao-hua Ma
;
Yue Hao
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/12/17
HEMTs
Wide band gap semiconductors
Aluminum gallium nitride
Logic gates
Oscillators
Mathematical model
Schottky diodes
AlGaN/GaN
electron domain
high-electron mobility transistor (HEMT)
recessed barrier layer (RBL)
terahertz
Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 771-776
作者:
Hongguan Yang
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/13
Logic
gates
Threshold
voltage
Silicon
MOSFET
Transconductance
Nanoscale
devices
Double-layer
gate
structure
MOS
devices
short-channel
effect
silicon
nanowire
(Si-NW)
threshold
voltage
characteristics
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:
L.Wang
;
L.Chen
;
S.L.Wong
;
X.Huang
;
W.G.Liao
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates
会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:
Lou, Haijun
;
Li, Wentao
;
Yang, Yumei
;
Lin, Xinnan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/11/15
Drain current
Threshold voltage
junctionless
Junctionless transistors
Recessed gate
sidewall
Sidewall angles
Subthreshold
A Memory Structure with Different Control Gates
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 7
作者:
Song, Zhitang
;
Guan, Jianmin
;
Dai, Mingzhi
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2018/12/04
Thin-film Transistors
Solar-cells
Tin
Temperature
Transparent
Performance
Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters
期刊论文
IEEE Transactions on Electron Devices, 2018, 页码: 1-7
作者:
Jianguo Lv
;
Li Zhu
;
Bing Yang
;
Gang He
;
Yuting Long
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/22
Dielectrics
Annealing
Logic
gates
Thin
film
transistors
Indium
Inverters
Surface
morphology
Environmentally
friendly
aqueous
solution
method
high-k
inverter
thin-film
transistor
water-induced
indium
oxide.
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