A Memory Structure with Different Control Gates

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	A Memory Structure with Different Control Gates
	Song, Zhitang; Guan, Jianmin; Dai, Mingzhi
刊名	ADVANCED ELECTRONIC MATERIALS
	2018
卷号	4 期号:7
关键词	Thin-film Transistors Solar-cells Tin Temperature Transparent Performance
英文摘要	Memory is a key and fundamental component in integrated circuits (IC). A dominant volatile memory is the dynamic random access memory (DRAM) with one transistor and one capacitor, whose footprint is comparable to about two transistors. Memory structure needs further simplification according to IC's scaling-down requirement. However, most updated structures at present are still mainly limited in lab. Here, a memory structure with one transistor is demonstrated. The advantages of this new structure over conventional memory structures include the simplification of the structure by saving a capacitor space in DRAM, and thus the simplification of fabrication process. Typical characterization of the memory device is also performed, and very quick response time (approximate to 1 ns), which is faster than most present memories in the foundry, that is, 2 ns or more, is reported. Both simulation and experiments are performed to explain the memory working mechanism. The memory programming functions are implemented through the junction caused by control gate. This structure could be scaled down by using lithography processes in the foundry, which could ensure a fair reliability and enable immediate applications for information technology electronics as a potential alternative candidate for DRAM.
学科主题	Materials Science ; Polymer Science
语种	英语
公开日期	2018-12-04
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17344]
专题	2018专题
推荐引用方式 GB/T 7714	Song, Zhitang,Guan, Jianmin,Dai, Mingzhi. A Memory Structure with Different Control Gates[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(7).
APA	Song, Zhitang,Guan, Jianmin,&Dai, Mingzhi.(2018).A Memory Structure with Different Control Gates.ADVANCED ELECTRONIC MATERIALS,4(7).
MLA	Song, Zhitang,et al."A Memory Structure with Different Control Gates".ADVANCED ELECTRONIC MATERIALS 4.7(2018).