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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:  Cui, X (Cui, Xu) [1] , [2] , [3];  Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3];  Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3];  Wei, Y (Wei, Ying) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏  |  浏览/下载：18/0  |  提交时间：2022/06/21
鳍式场效应晶体管及其制造方法 专利
专利号: US9679962, 申请日期: 2017-06-13, 公开日期: 2016-06-30
作者:  朱慧珑;  许淼;  赵利川
收藏  |  浏览/下载：8/0  |  提交时间：2018/07/18
Comparative Study on RTN Amplitude in Planar and FinFET Devices 其他
2017-01-01
Zhang, Zexuan; Zhang, Zhe; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique 期刊论文
Journal of Semiconductors, 2017
Wang Tian; Cui Xiaoxin; Ni Yewen; Liao Kai; Liao Nan; Yu Dunshan; Cui Xiaole
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03
Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique 期刊论文
半导体学报（英文版）, 2017
Tian Wang; Xiaoxin Cui; Yewen Ni; Kai Liao; Nan Liao; Dunshan Yu; Xiaole Cui
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devicesLingkuan 期刊论文
Applied Surface Science, 2016
作者:  Meng LK(孟令款);  Hong PZ(洪培真);  He XB(贺晓彬);  Li CL(李春龙);  Li JJ(李俊杰)
收藏  |  浏览/下载：17/0  |  提交时间：2017/05/09
半导体器件制造方法 专利
专利号: US9425288, 申请日期: 2016-08-23, 公开日期: 2014-01-09
作者:  钟汇才;  梁擎擎;  赵超
收藏  |  浏览/下载：15/0  |  提交时间：2017/06/12
Bulk FinFETs with body spacers for improving fin height variation 期刊论文
Solid-State Electronics, 2016
作者:  Wei X(魏星);  Zhu HL(朱慧珑);  Zhang YB(张严波);  Zhao C(赵超)
收藏  |  浏览/下载：13/0  |  提交时间：2017/05/09
Nanoscale triple-gate FinFET design considerations based on an analytical model of short-channel effects 期刊论文
2016, 2016
XIE Qian; LIANG RenRong; WANG Jing; LIU LiBin; XU Jun; XIE Qian; LIANG RenRong; WANG Jing; LIU LiBin; XU Jun
收藏  |  浏览/下载：6/0
Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond 其他
2016-01-01
Jiang, Xiaobo; Wang, Xingsheng; Wang, Runsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03

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