CORC

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CORC

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Organo-Solubility Carbazole-Containing Polyimides with Tunable Memory Characteristics Based on Different Dianhydride Moieties 期刊论文
MACROMOLECULAR CHEMISTRY AND PHYSICS, 2018, 卷号: 219, 期号: 17, 页码: 13
作者:  Yang, Yanhua;  Jin, Pan;  Ding, Shijin;  Chu, Yueying;  Shen, Yingzhong
收藏  |  浏览/下载：27/0  |  提交时间：2018/11/05
Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 87, 页码: 52, 56
作者:  Zhang, D.;  Li, T. R.;  Zhou, J. W.;  Jiang, Y. C.;  Ren, B.
收藏  |  浏览/下载：16/0  |  提交时间：2018/12/28
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions 期刊论文
Nanoscale Research Letters, 2018, 卷号: 13, 页码: 102
作者:  Caihong Jia ;   Jiachen Li ;   Guang Yang ;   Yonghai Chen ;   Weifeng Zhang
收藏  |  浏览/下载：30/0  |  提交时间：2019/11/14
Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions 期刊论文
Applied Physics A, 2018, 卷号: 124, 页码: 189
作者:  Caihong Jia ;  Yong Ren ;  Guang Yang ;   Jiachen Li ;   Yonghai Chen ;  Weifeng Zhang
收藏  |  浏览/下载：19/0  |  提交时间：2019/11/14
Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 87, 页码: 52-56
作者:  Zhang, D.[1];  Li, T. R.[2];  Zhou, J. W.[3];  Jiang, Y. C.[4];  Ren, B.[5]
收藏  |  浏览/下载：20/0  |  提交时间：2019/04/22
Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327
作者:  Su, Teng-Yu;  Huang, Chi-Hsin;  Shih, Yu-Chuan;  Wang, Tsang-Hsuan;  Medina, Henry
收藏  |  浏览/下载：0/0  |  提交时间：2019/11/15
Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory 期刊论文
Journal of Materials Chemistry C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327
作者:  Su, Teng-Yu;  Huang, Chi-Hsin;  Shih, Yu-Chuan;  Wang, Tsang-Hsuan;  Medina, Henry
收藏  |  浏览/下载：16/0  |  提交时间：2020/11/14
Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 679, 页码: 47-53
作者:  Zhou, Guangdong;  Zhao, Wenxi;  Ma, Xiaoqing;  Zhou, A. K.
收藏  |  浏览/下载：26/0  |  提交时间：2016/08/22
Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 卷号: 32
作者:  Hsieh, Wei-Kang;  Lam, Kin-Tak;  Chang, Shoou-Jinn
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/21
Mechanism for resistive switching in an oxide-based electrochemical metallization memory 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 111, 页码: 072101-1—072101-4
李润伟、诸葛飞; Shanshan Peng, Fei Zhuge,a) Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Lia
收藏  |  浏览/下载：8/0  |  提交时间：2013/12/16

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