Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage

CORC > 昆明植物研究所 > 中国科学院昆明植物研究所 > 资源植物与生物技术所级重点实验室

	Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage
	Zhou, Guangdong; Zhao, Wenxi; Ma, Xiaoqing; Zhou, A. K.
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2016-09-15
卷号	679 页码:47-53
关键词	Data storage Current-voltage hysteresis Switching resistance memory Ag filament
英文摘要	The composite MoS2/MoOx <= 3 nanobelts are synthesized by hydrothermal process at 500 K for 48 h. An asymmetric, Schottky-Omhic contacted MoS2/MoOx <= 3 nanobelts can be served as a switching resistance memory devices if the applied sweep voltage is high. The data storage effects can be clearly obtained after performing a cycle sweep voltage. The data storage effects mediated by the magnitude voltage have presented an excellent retention characteristics after stress 500 cycles sweep voltage at high voltage scan rate of 40 V/s, and have been easily "read" by a small probing voltage of 0.5 V. The uncross I-V hysteresis well maintained after performing high voltage scan rate of 500 V/s illustrates that the data can be programmed and erased with a high speed. The uncross current-voltage (I-V) hysteresis phenomenon should be attributed to the polar charges at the two ends and the space charges in the buck of the composite MoS2/MoOx <= 3 nanobelts. The excessive magnitude voltage has driven the Ag+ filament penetrating into the MoS2/MoOx <= 3 nanobelts might be responsible for the I-V hysteresis transformation from uncross to cross. (C) 2016 Elsevier B. V. All rights reserved.
类目[WOS]	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
研究领域[WOS]	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
关键词[WOS]	RESISTIVE SWITCHING MEMORY ; FERROELECTRIC THIN-FILMS ; DEVICES ; POLARIZATION ; MECHANISM ; CHARGES ; BIPOLAR ; DIODES
收录类别	SCI
语种	英语
WOS记录号	WOS:000376104900007
内容类型	期刊论文
源URL	[http://ir.kib.ac.cn/handle/151853/26249]
专题	昆明植物研究所_资源植物与生物技术所级重点实验室
推荐引用方式 GB/T 7714	Zhou, Guangdong,Zhao, Wenxi,Ma, Xiaoqing,et al. Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,679:47-53.
APA	Zhou, Guangdong,Zhao, Wenxi,Ma, Xiaoqing,&Zhou, A. K..(2016).Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage.JOURNAL OF ALLOYS AND COMPOUNDS,679,47-53.
MLA	Zhou, Guangdong,et al."Current-voltage hysteresis of the composite MoS2-MoOx <= 3 nanobelts for data storage".JOURNAL OF ALLOYS AND COMPOUNDS 679(2016):47-53.