| Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions | |
| Caihong Jia ; Jiachen Li ; Guang Yang ; Yonghai Chen ; Weifeng Zhang | |
| 刊名 | Nanoscale Research Letters
 |
| 2018 | |
| 卷号 | 13页码:102 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29093]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Caihong Jia ; Jiachen Li ; Guang Yang ; Yonghai Chen ; Weifeng Zhang. Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions[J]. Nanoscale Research Letters,2018,13:102. |
| APA | Caihong Jia ; Jiachen Li ; Guang Yang ; Yonghai Chen ; Weifeng Zhang.(2018).Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions.Nanoscale Research Letters,13,102. |
| MLA | Caihong Jia ; Jiachen Li ; Guang Yang ; Yonghai Chen ; Weifeng Zhang."Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions".Nanoscale Research Letters 13(2018):102. |
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