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CORC

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Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28, 期号: 5
作者:  Tian, Zhi-Feng;  Xu, Peng;  Yu, Yao;  Sun, Jian-Dong;  Feng, Wei
收藏  |  浏览/下载：55/0  |  提交时间：2019/12/26
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 430, 页码: 59-63
作者:  Hu, P. P.;  Liu, J.;  Zhang, S. X.;  Maaz, K.;  Zeng, J.
收藏  |  浏览/下载：26/0  |  提交时间：2018/10/08
TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 4807-4813
作者:  Meng, Qingzhi;  Lin, Qijing;  Jing, Weixuan;  Han, Feng;  Zhao, Man
收藏  |  浏览/下载：44/0  |  提交时间：2019/11/19
Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications 期刊论文
Rsc Advances, 2017, 卷号: 7, 期号: 88
作者:  Ding, X. Z.;  B. Miao;  Z. Q. Gu;  B. J. Wu;  Y. M. Hu
收藏  |  浏览/下载：12/0  |  提交时间：2018/06/13
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 3515-3518
作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Zhao, Cezhou
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26
GaN high electron mobility transistors with AlInN back barriers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 662
作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 1
作者:  Wang, K;  Xing, YH;  Han, J;  Zhao, KK;  Guo, LJ
收藏  |  浏览/下载：51/0  |  提交时间：2017/03/11
Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices 会议论文
作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Wang, Yun-Hsiang;  Zhao, Cezhou
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02
High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications 期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016
Yi, Shih-Han; Ruan, Dun-Bao; Di, Shaoyan; Liu, Xiaoyan; Wu, Yung Hsien; Chin, Albert
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/04

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