Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures

doi:10.1088/1674-1056/28/5/058501

	Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures
	Tian, Zhi-Feng; Xu, Peng; Yu, Yao; Sun, Jian-Dong; Feng, Wei; Ding, Qing-Feng; Meng, Zhan-Wei; Li, Xiang; Cui, Jin-Hua; Zheng, Zhong-Xin
刊名	CHINESE PHYSICS B
	2019-05-01
卷号	28 期号:5
关键词	terahertz detection gallium nitride noise spectrum responsivity
ISSN号	1674-1056
DOI	10.1088/1674-1056/28/5/058501
文献子类	Article
英文摘要	The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled Al-GaN/GaN high-electron-mobility-transistor (HEMT) terahertz detector are evaluated at temperatures elevated from 300 K to 473 K. Noise spectrum measurement and a simultaneous measurement of the source-drain conductance and the terahertz photocurrent allow for detailed analysis of the electrical characteristics, the photoresponse, and the noise behavior. The responsivity is reduced from 59 mA/W to 11 mA/W by increasing the detector temperature from 300 K to 473 K. However, the noise spectral density maintains rather constantly around 1-2 pA/Hz(1/2) at temperatures below 448 K, above which the noise spectrum abruptly shifts from Johnson-noise type into flicker-noise type and the noise density is increased up to one order of magnitude. The noise-equivalent power (NEP) is increased from 22 pW/Hz(1/2) at 300 K to 60 pW/Hz(1/2) at 448 K mainly due to the reduction in mobility. Above 448 K, the NEP is increased up to 1000 pW/Hz(1/2) due to the strongly enhanced noise. The sensitivity can be recovered by cooling the detector back to room temperature.
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27140]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Tian, Zhi-Feng,Xu, Peng,Yu, Yao,et al. Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures[J]. CHINESE PHYSICS B,2019,28(5).
APA	Tian, Zhi-Feng.,Xu, Peng.,Yu, Yao.,Sun, Jian-Dong.,Feng, Wei.,...&Sun, Yun-Fei.(2019).Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures.CHINESE PHYSICS B,28(5).
MLA	Tian, Zhi-Feng,et al."Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures".CHINESE PHYSICS B 28.5(2019).