GaN high electron mobility transistors with AlInN back barriers

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	GaN high electron mobility transistors with AlInN back barriers
	He, XG; Zhao, DG; Jiang, DS; Zhu, JJ; Chen, P; Liu, ZS; Le, LC; Yang, J; Li, XJ; Liu, JP(刘建平)
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2016
卷号	662
通讯作者	Zhao, DG
英文摘要	GaN based high electron mobility transistor (HEMT) structures with AlInN back barriers are designed and investigated by Self-consistent Schrodinger-Poisson numerical simulation. An inserted AlInN back barrier is able to provide a good electron confinement and eliminate the parallel electron channel. It is shown that AlInN ternary alloy is a proper choice for back barrier material since the Al composition can be modulated to get not only a positive polarization to raise up the conduction band of GaN buffer but also a broader band gap than GaN's to avoid forming a potential well. (C) 2015 Elsevier B.V. All rights reserved.
关键词[WOS]	FIELD-EFFECT TRANSISTORS ; DOUBLE-HETEROSTRUCTURE ; SURFACE-STATES ; ALGAN/GAN
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000368336200003
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4864]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	He, XG,Zhao, DG,Jiang, DS,et al. GaN high electron mobility transistors with AlInN back barriers[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,662.
APA	He, XG.,Zhao, DG.,Jiang, DS.,Zhu, JJ.,Chen, P.,...&Yang, H.(2016).GaN high electron mobility transistors with AlInN back barriers.JOURNAL OF ALLOYS AND COMPOUNDS,662.
MLA	He, XG,et al."GaN high electron mobility transistors with AlInN back barriers".JOURNAL OF ALLOYS AND COMPOUNDS 662(2016).