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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载:53/10  |  提交时间:2011/07/05
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文
materials science in semiconductor processing, 2011
Hu, Qiang; Wei, Tongbo; Duan, Ruifei; Yang, Jiankun; Huo, Ziqiang; Zeng, Yiping; Xu, Shu
收藏  |  浏览/下载:30/0  |  提交时间:2012/06/14
Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Ji, Panfeng; Liu, Naixin; Wei, Xuecheng; Liu, Zhe; Lu, Hongxi; Wang, Junxi; Li, Jinmin
收藏  |  浏览/下载:17/0  |  提交时间:2012/06/14
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104
Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min)
收藏  |  浏览/下载:255/64  |  提交时间:2010/05/24
Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence 期刊论文
journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126
Li H; Wang Z; Zhou K; Pang JB; Ke JY; Zhao YW
收藏  |  浏览/下载:59/1  |  提交时间:2010/03/08
First-principles study of native defects in rutile TiO2 期刊论文
physics letters a, 2008, 卷号: 372, 期号: 9, 页码: 1527-1530
Peng, H
收藏  |  浏览/下载:87/28  |  提交时间:2010/03/08
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC; Zhao, YW; Dong, ZY; Li, JM
收藏  |  浏览/下载:52/0  |  提交时间:2010/03/08
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.)
收藏  |  浏览/下载:162/28  |  提交时间:2010/03/29
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
收藏  |  浏览/下载:20/0  |  提交时间:2010/04/11
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.); Li CJ (Li C. J.)
收藏  |  浏览/下载:48/0  |  提交时间:2010/04/11


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