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科研机构
半导体研究所 [55]
内容类型
期刊论文 [41]
会议论文 [14]
发表日期
2011 [3]
2010 [1]
2009 [1]
2008 [2]
2007 [1]
2006 [6]
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半导体材料 [55]
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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:53/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
materials science in semiconductor processing, 2011
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
;
Zeng, Yiping
;
Xu, Shu
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Influence of growth conditions on the V-defects in InGaN/GaN MQWs
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Ji, Panfeng
;
Liu, Naixin
;
Wei, Xuecheng
;
Liu, Zhe
;
Lu, Hongxi
;
Wang, Junxi
;
Li, Jinmin
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/06/14
Gallium nitride
Growth temperature
Semiconductor quantum wells
Surface defects
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104
Hou QF (Hou Qi-Feng)
;
Wang XL (Wang Xiao-Liang)
;
Xiao
;
HL (Xiao Hong-Ling)
;
Wang CM (Wang Cui-Mei)
;
Yang CB (Yang Cui-Bai)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:255/64
  |  
提交时间:2010/05/24
N-TYPE GAN
DEEP LEVELS
SELENIDE
DEFECTS
Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126
Li H
;
Wang Z
;
Zhou K
;
Pang JB
;
Ke JY
;
Zhao YW
收藏
  |  
浏览/下载:59/1
  |  
提交时间:2010/03/08
GaSb
Proton irradiation
Defects
Positron lifetime
Photoluminescence
First-principles study of native defects in rutile TiO2
期刊论文
physics letters a, 2008, 卷号: 372, 期号: 9, 页码: 1527-1530
Peng, H
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  |  
浏览/下载:87/28
  |  
提交时间:2010/03/08
defects
rutile
TiO2
first-principles
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method
期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/03/08
defects
X-ray diffraction
growth from vapor
oxides
semiconducting II-VI materials
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:162/28
  |  
提交时间:2010/03/29
micro-raman
4H-SiC
defects
3C-inclusions
triangle-shaped inclusion
EPITAXIAL LAYERS
SILICON-CARBIDE
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.)
;
Li CJ (Li C. J.)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
DLTS
defects
detectors
sensors
current transient
SILICON DETECTORS
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