First-principles study of native defects in rutile TiO2

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	First-principles study of native defects in rutile TiO2
	Peng, H
刊名	physics letters a
	2008
卷号	372 期号:9 页码:1527-1530
关键词	defects rutile TiO2 first-principles
ISSN号	0375-9601
通讯作者	peng, h, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: mypen-cn@semi.ac.cn
中文摘要	native point defects in the rutile tio2 are studied via first-principles pseudopotential calculations. except for the two antisite defects, all the native point defects have low formation energies. under the ti-rich growth condition, high concentrations of titanium interstitials and oxygen vacancies would form spontaneously in p-type samples; whereas high concentrations of titanium vacancies would form spontaneously in n-type samples regardless of the oxygen partial pressure. (c) 2007 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6820]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Peng, H. First-principles study of native defects in rutile TiO2[J]. physics letters a,2008,372(9):1527-1530.
APA	Peng, H.(2008).First-principles study of native defects in rutile TiO2.physics letters a,372(9),1527-1530.
MLA	Peng, H."First-principles study of native defects in rutile TiO2".physics letters a 372.9(2008):1527-1530.