Micro-raman investigation of defects in a 4H-SiC homoepilayer

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	Micro-raman investigation of defects in a 4H-SiC homoepilayer
	Liu, XF (Liu, X. F.) ; Sun, GS (Sun, G. S.) ; Li, JM (Li, J. M.) ; Zhao, YM (Zhao, Y. M.) ; Li, JY (Li, J. Y.) ; Wang, L (Wang, L.) ; Zhao, WS (Zhao, W. S.) ; Luo, MC (Luo, M. C.) ; Zeng, YP (Zeng, Y. P.)
	2007
会议名称	6th european conference on silicon carbide and related materials
会议日期	sep, 2006
会议地点	newcastle upon tyne, england
关键词	micro-raman 4H-SiC defects 3C-inclusions triangle-shaped inclusion EPITAXIAL LAYERS SILICON-CARBIDE
页码	556-557: 387-390
通讯作者	liu, xf, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china.
中文摘要	three types of defects, namely defect i, defect 11, defect 111, in the 4h-sic homoepilayer were investigated by micro-raman scattering measurement. these defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. it was found that there are 3c-sic inclusions in the cores of defect 11 and defect iii and the shape of inclusion determines the type of defect ii or defect iii. if the core contains a triangle-shaped inclusion, the defect iii would be formed; otherwise, the defect 11 was formed. no inclusion was observed in the core of the defect i. the mechanisms of these defects are discussed.
英文摘要	three types of defects, namely defect i, defect 11, defect 111, in the 4h-sic homoepilayer were investigated by micro-raman scattering measurement. these defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. it was found that there are 3c-sic inclusions in the cores of defect 11 and defect iii and the shape of inclusion determines the type of defect ii or defect iii. if the core contains a triangle-shaped inclusion, the defect iii would be formed; otherwise, the defect 11 was formed. no inclusion was observed in the core of the defect i. the mechanisms of these defects are discussed.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:11z (gmt). no. of bitstreams: 1 2279.pdf: 1350402 bytes, checksum: 9ad8f392d2c09156a5add8749e06bb21 (md5) previous issue date: 2007; ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc.; chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc.
会议录	silicon carbide and related materials 2006丛书标题: materials science forum
会议录出版者	trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland
会议录出版地	laublsrutistr 24, ch-8717 stafa-zurich, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0255-5476
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9856]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu, XF ,Sun, GS ,Li, JM ,et al. Micro-raman investigation of defects in a 4H-SiC homoepilayer[C]. 见:6th european conference on silicon carbide and related materials. newcastle upon tyne, england. sep, 2006.