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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Han PD
收藏  |  浏览/下载:83/1  |  提交时间:2010/10/29
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Han PD
收藏  |  浏览/下载:16/0  |  提交时间:2010/10/29
Growth and characterization of GaN on LiGaO2 会议论文
9th international conference on metalorganic vpour phase epitaxy (icmovpe-ix), la jolla, california, may 31-jun 04, 1998
作者:  Han PD
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15
DIODES  
Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文
2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998
作者:  Han PD
收藏  |  浏览/下载:12/0  |  提交时间:2010/10/29
DIODES  
Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997
作者:  Han PD
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/15
GAAS  GROWTH  
Material transport in self-assembled InAs/GaAs quantum dot ensemble 会议论文
10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997
作者:  Han PD
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15


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