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	Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
	Han PD
	2000
会议名称	international workshop on nitride semiconductors (iwn 2000)
会议日期	sep 24-27, 2000
会议地点	nagoya, japan
关键词	AlGaN/GaN heterostructures In-doping 2DEG electron sheet density X-ray diffraction etching CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY PHASE EPITAXY MOBILITY GROWTH FILMS
页码	923-926
通讯作者	lu dc chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	indium (in)-doping was applied in gan layers during growth of algan/gan heterostructure with unintentionally doped or modulation si-doped algan layers. it was found that in-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2deg) in the heterostructures. furthermore, in-doping also improved mobility in heterostructures with si modulation-doped in algan layers. the possible reasons were discussed. x-ray diffraction (xrd) and wet chemical etching revealed that crystalline quality of gan was improved by in-doping. it was proposed that in-doping modified growth kinetics of gan.
收录类别	CPCI-S
会议主办者	japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125.
会议录	proceedings of the international workshop on nitride semiconductors, 1
会议录出版者	inst pure applied physics ; daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
会议录出版地	daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
学科主题	半导体物理
语种	英语
ISBN号	4-900526-13-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13745]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures[C]. 见:international workshop on nitride semiconductors (iwn 2000). nagoya, japan. sep 24-27, 2000.

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