Growth and characterization of GaN on LiGaO2 and LiAlO2

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	Growth and characterization of GaN on LiGaO2 and LiAlO2
	Han PD
	1998
会议名称	2nd international symposium on blue laser and light emitting diodes (2nd isblled)
会议日期	sep 29-oct 02, 1998
会议地点	chiba, japan
关键词	DIODES
页码	158-161
通讯作者	duan sk chinese acad sci inst semicond natl integrated optoelect lab beijing 100083 peoples r china.
中文摘要	the nearly lattice-matched ligao2 and lialo2 substrates have been used for the growth of gan by lp-movpe. gan epilayers have been grown on the two substrates at very low input partial pressure of hydrogen and relatively low growth temperature. the difference in the growth rate, crystal and optical qualities of hexagonal gan epilayers grown on lialo2 and ligao2 substrate with two polar domains are investigated. lialo2 and ligao2 single crystal with a single domain structure and an adequate surface plane are promising substrates for the growth of high quality of hexagonal gan thin films.
英文摘要	the nearly lattice-matched ligao2 and lialo2 substrates have been used for the growth of gan by lp-movpe. gan epilayers have been grown on the two substrates at very low input partial pressure of hydrogen and relatively low growth temperature. the difference in the growth rate, crystal and optical qualities of hexagonal gan epilayers grown on lialo2 and ligao2 substrate with two polar domains are investigated. lialo2 and ligao2 single crystal with a single domain structure and an adequate surface plane are promising substrates for the growth of high quality of hexagonal gan thin films.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:07z (gmt). no. of bitstreams: 0 previous issue date: 1998; japan soc promot sci, 162nd & 125th comm.; support ctr adv telecommun technol res fdn.; nippon sheet glass fdn mat sci.; res fdn electrotechnol chubu.; inoue fdn sci.; chiba convent bureau.; ogasawara fdn promot sci & engn.; izumi sci & technol fdn.; murata sci fdn.; telecommun advancement fdn.; suzuki fdn.; futaba electr memorial fdn.; chinese acad sci, inst semicond, natl integrated optoelect lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc promot sci, 162nd & 125th comm.; support ctr adv telecommun technol res fdn.; nippon sheet glass fdn mat sci.; res fdn electrotechnol chubu.; inoue fdn sci.; chiba convent bureau.; ogasawara fdn promot sci & engn.; izumi sci & technol fdn.; murata sci fdn.; telecommun advancement fdn.; suzuki fdn.; futaba electr memorial fdn.
会议录	blue laser and light emitting diodes ii
会议录出版者	ohmsha ltd ; 1-3 kanda nishiki-cho, chiyoda-ku, tokyo, 101, japan
会议录出版地	1-3 kanda nishiki-cho, chiyoda-ku, tokyo, 101, japan
学科主题	半导体材料
语种	英语
ISBN号	4-274-90245-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13805]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Growth and characterization of GaN on LiGaO2 and LiAlO2[C]. 见:2nd international symposium on blue laser and light emitting diodes (2nd isblled). chiba, japan. sep 29-oct 02, 1998.