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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers 期刊论文 journal of magnetism and magnetic materials, 2007, 卷号: 308, 期号: 2, 页码: 313-317 作者:  Tan PH;  Gan HD 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 magnetic semiconductors   Cr-doped InAs self-organized diluted magnetic quantum dots with room-temperature ferromagnetism 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 7, 页码: 2118-2121 Zheng YH (Zheng Yu-Hong); Zhao JH (Zhao Jian-Hua); Bi JF (Bi Jing-Feng); Wang WZ (Wang Wei-Zhu); Ji Y (Ji Yang); Wu XG (Wu Xiao-Guang); Xia JB (Xia Jian-Bai) 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29 THIN-FILMS   Room-temperature ferromagnetism in zinc-blende and deformed CrAs thin films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 14, 页码: art.no.142509 作者:  Zheng YH 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  MULTILAYER  ABSORPTION  GAAS  CRSB   Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 493-496 作者:  Zheng YH 收藏  |  浏览/下载：204/0  |  提交时间：2010/04/11 ROOM-TEMPERATURE FERROMAGNETISM  MOLECULAR-BEAM EPITAXY  MULTILAYER  CRAS   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 期刊论文 thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：52/0  |  提交时间：2010/04/11 time-resolved photoluminescence  InAs self-assembled QDs  migration of carriers  1.3 MU-M  DEPENDENT RADIATIVE DECAY  THERMAL REDISTRIBUTION  EXCITONS  RECOMBINATION  RELAXATION  LIFETIMES  EMISSION  EPITAXY  LASERS   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文 journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79 Kong LM (Kong Lingmin); Cai JF (Cai Jiafa); Wu ZY (Wu Zhengyun); Gong Z (Gong Zheng); Fang ZD (Fang Zhidan); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：51/0  |  提交时间：2010/04/11 InGaAs layer  InAs quantum dots  time-resolved PL spectra  1.3 MU-M  CARRIER DYNAMICS  LASERS  GROWTH  WAVELENGTH  EMISSION  ISLANDS  LAYERS  SIZE   Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers 期刊论文 journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.093902 Deng JJ; Zhao JH; Bi JF; Niu ZC; Yang FH; Wu XG; Zheng HZ 收藏  |  浏览/下载：99/0  |  提交时间：2010/04/11 MOLECULAR-BEAM-EPITAXY  ROOM-TEMPERATURE FERROMAGNETISM  SPINTRONICS  MULTILAYER  FILMS  CRAS   Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3) 期刊论文 journal of applied physics, 2000, 卷号: 88, 期号: 6, 页码: 3392-3395 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 1.3 MU-M  MOLECULAR-BEAM EPITAXY  ROOM-TEMPERATURE  PHOTOLUMINESCENCE LINEWIDTH  EMISSION  LASERS  ENERGY   High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions 期刊论文 japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 12a, 页码: 6729-6731 Zhang BJ; Yi MB; Song JF; Gao DS; Zhu NH; Wu RH; Wang W 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 semiconductor laser  heterostructure  proton bombardment  modulation bandwidth  MOCVD  CURRENT BLOCKING LAYERS  INNER-STRIPE LASERS