Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures

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	Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
	Kong LM (Kong Lingmin) ; Cai JF (Cai Jiafa) ; Wu ZY (Wu Zhengyun) ; Gong Z (Gong Zheng) ; Fang ZD (Fang Zhidan) ; Niu ZC (Niu Zhichuan)
刊名	journal of wuhan university of technology-materials science edition
	2006
卷号	21 期号:2 页码:76-79
关键词	InGaAs layer InAs quantum dots time-resolved PL spectra 1.3 MU-M CARRIER DYNAMICS LASERS GROWTH WAVELENGTH EMISSION ISLANDS LAYERS SIZE
ISSN号	1000-2413
通讯作者	wu, zy, xiamen univ, dept phys, xiamen 361005, peoples r china. e-mail: konglm0592@yahoo.com ; zhywu@xmu.edu.cn
中文摘要	the effects of various ingaas layers on the structural and optical properties of inas self-assembled quantum dots (qds) grown by molecular-beam epitaxy ( mbe) were investigated. the emission wavelength of 1317 nm was obtained by embedding inas qds in ingas/ggas quantum well. the temperature-dependent and timed-resolved photoluminescence (tdpl and trpl) were used to study the dynamic characteristics of carriers. ingaas cap layer may improve the quality of quantum dots for the strain relaxation around qds, which results in a stronger pl intensity and an increase of pl peak lifetime up to 170 k. we found that ingaas buffer layer may reduce the pl peak lifetime of inas qds, which is due to the buffer layer accelerating the carrier migration. the results also show that ingaas cap layer can increase the temperature point when, the thermal reemission and nonradiative recombination contribute significantly to the carrier dynamics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10550]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kong LM ,Cai JF ,Wu ZY ,et al. Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures[J]. journal of wuhan university of technology-materials science edition,2006,21(2):76-79.
APA	Kong LM ,Cai JF ,Wu ZY ,Gong Z ,Fang ZD ,&Niu ZC .(2006).Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures.journal of wuhan university of technology-materials science edition,21(2),76-79.
MLA	Kong LM ,et al."Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures".journal of wuhan university of technology-materials science edition 21.2(2006):76-79.