Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers

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	Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers
	Deng JJ ; Zhao JH ; Bi JF ; Niu ZC ; Yang FH ; Wu XG ; Zheng HZ
刊名	journal of applied physics
	2006
卷号	99 期号:9 页码:art.no.093902
关键词	MOLECULAR-BEAM-EPITAXY ROOM-TEMPERATURE FERROMAGNETISM SPINTRONICS MULTILAYER FILMS CRAS
ISSN号	0021-8979
通讯作者	zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: jhzhao@red.semi.ac.cn
中文摘要	zinc-blende crsb (zb-crsb) layers with room-temperature ferromagnetism have been grown on (in,ga)as buffer layers epitaxially prepared on (001) gaas substrates by molecular-beam epitaxy. compared with the typical thickness [2-3 ml (ml denotes monolayers)] of zb-crsb grown directly on gaas, the thickness of zb-crsb grown on (in,ga)as has been increased largely; the maximum can be up to similar to 9 ml. high-resolution cross sectional transmission electron microscopy images show that the zb-crsb layer is combined with (in,ga)as buffer layer without any dislocations at the interface. (c) 2006 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10658]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Deng JJ,Zhao JH,Bi JF,et al. Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers[J]. journal of applied physics,2006,99(9):art.no.093902.
APA	Deng JJ.,Zhao JH.,Bi JF.,Niu ZC.,Yang FH.,...&Zheng HZ.(2006).Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers.journal of applied physics,99(9),art.no.093902.
MLA	Deng JJ,et al."Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers".journal of applied physics 99.9(2006):art.no.093902.