Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers

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	Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers
	Zheng YH
刊名	chinese physics letters
	2006
卷号	23 期号:2 页码:493-496
关键词	ROOM-TEMPERATURE FERROMAGNETISM MOLECULAR-BEAM EPITAXY MULTILAYER CRAS
ISSN号	0256-307x
通讯作者	zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: jhzhao@red.semi.ac.cn
中文摘要	zincblende crsb (zb-crsb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (in,ga)as buffer layers epitaxially prepared on (001) gaas substrates by molecular-beam epitaxy. the structural characterizations of crsb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction (gid). the results of gid experiments indicate that no sign of second phase exists in all the zb-crsb layers. superconducting quantum interference device measurements demonstrate that the thickness of zb-crsb layers grown on both relaxed and strained (in,ga)as buffer layers can be increased to similar to 12 monolayers (similar to 3.6nm), compared to similar to 3 monolayers (similar to 1nm) on gaas directly.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10858]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zheng YH. Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers[J]. chinese physics letters,2006,23(2):493-496.
APA	Zheng YH.(2006).Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers.chinese physics letters,23(2),493-496.
MLA	Zheng YH."Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers".chinese physics letters 23.2(2006):493-496.