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| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 作者: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11 |
| XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2017/03/10 |
| Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 materials technology, 2016 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2017/03/10 |
| Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文 optics express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2017/03/10 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文 journal of applied physics, 2015, 卷号: 117, 页码: 055709 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:17/0  |  提交时间:2016/03/23 |
| Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文 optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935 W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2016/03/23 |
| Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:36/0  |  提交时间:2010/12/12
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| Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.046101 Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/04/11
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