Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

	Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD
	F. Liang ; P. Chen ; D. G. Zhao ; D. S. Jiang ; Z. J. Zhao ; Z. S. Liu ; J. J. Zhu ; J. Yang ; W. Liu ; X. G. He ; X. J. Li ; X. Li ; S. T. Liu ; H. Yang ; J. P. Liu ; L. Q. Zhang ; Y. T. Zhang ; G. T. Du
刊名	applied physics a
	2016
卷号	122 期号:9
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27873]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	F. Liang,P. Chen,D. G. Zhao,et al. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD[J]. applied physics a,2016,122(9).
APA	F. Liang.,P. Chen.,D. G. Zhao.,D. S. Jiang.,Z. J. Zhao.,...&G. T. Du.(2016).Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD.applied physics a,122(9).
MLA	F. Liang,et al."Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD".applied physics a 122.9(2016).