Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

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	Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes
	Li DY (Li D. Y.) ; Huang YZ (Huang Y. Z.) ; Zhu JJ (Zhu J. J.) ; Zhao DG (Zhao D. G.) ; Liu ZS (Liu Z. S.) ; Zhang SM (Zhang S. M.) ; Ye XJ (Ye X. J.) ; Chong M (Chong M.) ; Chen LH (Chen L. H.) ; Yang H (Yang H.) ; Liang JW (Liang J. W.)
刊名	journal of applied physics
	2006
卷号	100 期号:4 页码:art.no.046101
关键词	LINEWIDTH ENHANCEMENT FACTOR WAVE-GUIDE LASER GAN SUBSTRATE INDEX TEMPERATURE GAIN
ISSN号	0021-8979
通讯作者	li, dy, chinese acad sci, inst semicond, state key lab integrated optoelect & nanooptoelec, pob 912, beijing 100083, peoples r china. e-mail: dyli@red.semi.ac.cn
中文摘要	time-resolved light-current curves, spectra, and far-field distributions of ridge structure ingan multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. results show that the thermal lensing effect clearly improves the confinement of the higher order modes. the thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. the threshold current for the higher modes decreases by about 5 ma in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10416]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DY ,Huang YZ ,Zhu JJ ,et al. Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes[J]. journal of applied physics,2006,100(4):art.no.046101.
APA	Li DY .,Huang YZ .,Zhu JJ .,Zhao DG .,Liu ZS .,...&Liang JW .(2006).Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes.journal of applied physics,100(4),art.no.046101.
MLA	Li DY ,et al."Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes".journal of applied physics 100.4(2006):art.no.046101.