Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

	Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
	J. Yang ; D. G. Zhao ; D. S. Jiang ; P. Chen ; J. J. Zhu ; Z. S. Liu ; L. C. Le ; X. J. Li ; X. G. He ; J. P. Liu ; H. Yang ; Y. T. Zhang ; G. T. Du
刊名	journal of applied physics
	2015
卷号	117 页码:055709
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26755]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	J. Yang,D. G. Zhao,D. S. Jiang,et al. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness[J]. journal of applied physics,2015,117:055709.
APA	J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&G. T. Du.(2015).Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness.journal of applied physics,117,055709.
MLA	J. Yang,et al."Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness".journal of applied physics 117(2015):055709.