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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2020     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550 作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ] 收藏  |  浏览/下载：44/0  |  提交时间：2020/07/06 Charge coupled devices (CCDs)  proton irradiation  neutron irradiation  hot pixels  displacement damage effects   Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868 作者:  Cai, YL (Cai, Yulong)[ 1,2 ];  Wen, L (Wen, Lin)[ 3 ];  Li, YD (Li, Yudong)[ 3 ];  Guo, Q (Guo, Qi)[ 3 ];  Zhou, D (Zhou, Dong)[ 3 ] 收藏  |  浏览/下载：26/0  |  提交时间：2020/09/09 Complementary metal-oxide-semiconductor  (CMOS) image sensors (CIS)  heavy ions  pulsed laser  single-event latchup (SEL)  single-event transient (SET)   Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors 期刊论文 JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021 作者:  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ] 收藏  |  浏览/下载：22/0  |  提交时间：2020/12/09 14-MeV neutron  neutron irradiation  radiation damage  radiation effect   Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566 作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ] 收藏  |  浏览/下载：39/0  |  提交时间：2020/12/11 SiC MOSFET  total ionizing dose irradiation  time-dependent dielectric breakdown   Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors 期刊论文 RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7 作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ] 收藏  |  浏览/下载：22/0  |  提交时间：2021/03/19 Backside illuminated CMOS image sensor  Random telegraph signal  Radiation effects  Proton irradiation  Theoretical calculation   TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325 作者:  Ren, ZX (Ren, Zhexuan)[ 1 ];  An, X (An, Xia)[ 1 ];  Li, GS (Li, Gensong)[ 1 ];  Chen, G (Chen, Gong)[ 1 ];  Li, M (Li, Ming)[ 1 ] 收藏  |  浏览/下载：36/0  |  提交时间：2020/09/09 Bulk Si FinFET  fin width  orientation  PMOS  threshold voltage shift  total ionizing dose (TID)