Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors

doi:10.1080/00223131.2020.1751323

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
	Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Li, YD (Li, Yudong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ]; Cai, YL (Cai, Yulong)[ 1,2,3 ]; Liu, BK (Liu, Bingkai)[ 1,2,3 ]; Fu, J (Fu, Jing)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]
刊名	JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY
	2020
卷号	57 期号:9 页码:1015-1021
关键词	14-MeV neutron neutron irradiation radiation damage radiation effect
ISSN号	0022-3131
DOI	10.1080/00223131.2020.1751323
英文摘要	BackSide-Illuminated (BSI) CMOS Image Sensors (CISs), with developed performance on quantum efficiency and sensitivity, have been applied for aerospace missions and gradually replaced FrontSide-Illuminated (FSI) CISs. Two types of BSI CISs with different epitaxial layer thicknesses were irradiated by 14-MeV neutron up to 3.40 x 10(11) n/cm(2) to analyze the degradation induced by neutron irradiation. Dark current, dark current distribution, full well capacity, and spectral response were tested before and after the neutron irradiation and at different annealing time points with various temperatures. The results were analyzed to characterize the degradation introduced by the unique backside passivation layer, and the converse illuminated direction. The interface states induced by displacement damage effects at the backside passivation layer were considered as a novel origin of dark current which was not involved in FSI CISs.
WOS记录号	WOS:000527186400001
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7675]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
通讯作者	Li, YD (Li, Yudong)[ 1,2 ]
作者单位	1.Univ Chinese Acad Sci, Beijing, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China 3.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China
推荐引用方式 GB/T 7714	Zhang, X ,Li, YD ,Wen, L ,et al. Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors[J]. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY,2020,57(9):1015-1021.
APA	Zhang, X .,Li, YD .,Wen, L .,Feng, J .,Zhou, D .,...&Guo, Q .(2020).Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors.JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY,57(9),1015-1021.
MLA	Zhang, X ,et al."Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors".JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY 57.9(2020):1015-1021.