QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Contrasting Mg isotopic compositions between Fe-Mn nodules and surrounding soils: Accumulation of light Mg isotopes by Mg-depleted clay minerals and Fe oxides 期刊论文 Geochimica Et Cosmochimica Acta, 2018, 卷号: 237, 页码: 205-222 作者:  Ting Gao;  Shan Ke;  Shui-Jiong Wang;  Fangbai Li;  Chengshuai Liu;  Jing Lei;  Changzhong Liao;  Fei Wu 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/30 Mg Isotopes  Soils  Fe Oxides  Mg-depleted Clay Mineral  Exchangeable Mg   Activation of Persulfates Using Siderite as a Source of Ferrous Ions: Sulfate Radical Production, Stoichiometric Efficiency, and Implications 期刊论文 ACS Sustainable Chemistry and Engineering, 2018, 卷号: 6, 期号: 3, 页码: 3624-3631 作者:  Feng, Yong;  Wu, Deli;  Li, Hailong;  Bai, Jianfeng;  Hu, Yibo 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/03 Persulfates  Siderite  Sulfate radicals  Ferrous ions  Controlled release   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2844-2849 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：9/0  |  提交时间：2019/11/21 passivation layers (PVLs)  light illumination stress stability  Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  thin film transistors (TFTs)   Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field-Effect Transistors 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2018, 卷号: 28, 期号: 26 作者:  Jiang, Bei;  Zou, Xuming;  Su, Jie;  Liang, Jinghua;  Wang, Jingli 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/05 black phosphorus  energy band calculation  pinning effect  Schottky barrier  thickness-dependent   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 7 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05 Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  light illumination stress stability  passivation layers (PVLs)  thin film transistors (TFTs)   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: Vol.65 No.7, 页码: 2844-2849 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/26 Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  light illumination stress stability  passivation layers (PVLs)  thin film transistors (TFTs)