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Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 期号: 12, 页码: 1026
作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19
Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 页码: 744
作者:  Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang ;   Mo Li ;   Yuantao Zhang;   Guotong Du
收藏  |  浏览/下载：11/0  |  提交时间：2019/11/19
Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 3
作者:  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12
Cathodoluminescence of yellow and blue luminescence in undoped semi-insulating gan and n-gan 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: 4
作者:  Hou Qi-Feng;  Wang Xiao-Liang;  Xiao Hong-Ling;  Wang Cui-Mei;  Yang Cui-Bai
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载：41/4  |  提交时间：2011/07/05
Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations 期刊论文
Journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: 4
作者:  Gai, Yanqin;  Li, Jingbo;  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:  Li JB;  Hou QF
收藏  |  浏览/下载：66/11  |  提交时间：2010/03/08
Effect of beta-irradiation on photoluminescence of MOCVD grown GaN 期刊论文
journal of materials science-materials in electronics, 2009, 卷号: 20, 期号: 1, 页码: 14-16
Majid A; Israr M; Zhu JJ; Ali A
收藏  |  浏览/下载：266/76  |  提交时间：2010/03/08
Effect of beta-irradiation on photoluminescence of mocvd grown gan 期刊论文
Journal of materials science-materials in electronics, 2009, 卷号: 20, 期号: 1, 页码: 14-16
作者:  Majid, Abdul;  Israr, M.;  Zhu, Jianjun;  Ali, Akbar
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12

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