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	Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan
	Hou, Qifeng1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2,3; Wang, Cuimei1,2,3; Yang, Cuibai1,2,3; Yin, Haibo1; Deng, Qingwen1; Li, Jinmin1,3; Wang, Zhanguo2; Hou, Xun3
刊名	Applied physics letters
	2011-03-07
卷号	98期号:10页码:3
ISSN号	0003-6951
DOI	10.1063/1.3562008
通讯作者	Hou, qifeng(qfhou@semi.ac.cn)
英文摘要	The influence of electric field on persistent photoconductivity in unintentionally doped n-gan is investigated. it was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. after a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. it is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the coulomb-repulsive characteristic of defects related to persistent photoconductivity. (c) 2011 american institute of physics. [doi:10.1063/1.3562008]
WOS关键词	QUANTUM-WELL-STRUCTURE ; ALGAN/GAN HETEROSTRUCTURE ; YELLOW LUMINESCENCE ; DEEP LEVELS ; TRAP ; PERFORMANCE ; FREQUENCY ; EPILAYERS ; ORIGIN ; DIODES
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000288277200030
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428343
专题	半导体研究所
通讯作者	Hou, Qifeng
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hou, Qifeng,Wang, Xiaoliang,Xiao, Hongling,et al. Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan[J]. Applied physics letters,2011,98(10):3.
APA	Hou, Qifeng.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Hou, Xun.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan.Applied physics letters,98(10),3.
MLA	Hou, Qifeng,et al."Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan".Applied physics letters 98.10(2011):3.

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