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CORC

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GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：128/4  |  提交时间：2010/04/13
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载：74/0  |  提交时间：2010/03/08
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：69/3  |  提交时间：2010/03/08
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：20/0  |  提交时间：2010/03/08
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Luo WJ; Wang XL; Guo LC; Mao HL; Wang CM; Ran JX; Li JP; Li JM
收藏  |  浏览/下载：191/53  |  提交时间：2010/03/08
GaN  Si(111)  Crack  AlN  MOCVD  
Surface plasmon enhanced ultraviolet emission from ZnO films deposited on Ag/Si(001) by magnetron sputtering 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 23, 页码: art. no. 231907
作者:  Zhang XW;  You JB;  Fan YM
收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.)
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
STRESS  
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29

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