Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

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	Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
	Lin, GQ ; Zeng, YP ; Wang, XL ; Liu, HX
刊名	chinese physics letters
	2008
卷号	25 期号:11 页码:4097-4100
关键词	RHEED INTERLAYER PRESSURE NITRIDES LAYERS MBE
ISSN号	0256-307x
通讯作者	lin, gq, chinese acad sci, inst semicond, novel mat lab, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lingq@semi.ac.cn
中文摘要	hexagonal gan is grown on a si(111) substrate with aln as a buffer layer by gas source molecular beam epitaxy (gsmbe) with ammonia. the thickness of aln buffer is changed from 9 to 72 nm. when the thickness of aln buffer is 36 nm, the surface morphology and crystal quality of gan is optimal. the in-situ reflection high energy electron diffraction (rheed) reveals that the transition to a two-dimensional growth mode of aln is the key to the quality of gan. however, the thickness of aln buffer is not so critical to the residual in-plane tensile stress in gan grown on si(111) by gsmbe for aln thickness between 9 to 72 nm.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6368]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lin, GQ,Zeng, YP,Wang, XL,et al. Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia[J]. chinese physics letters,2008,25(11):4097-4100.
APA	Lin, GQ,Zeng, YP,Wang, XL,&Liu, HX.(2008).Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia.chinese physics letters,25(11),4097-4100.
MLA	Lin, GQ,et al."Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia".chinese physics letters 25.11(2008):4097-4100.